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Numerical analysis of the production profile of H$$^{0}$$ atoms and subsequent H$$^{-}$$ ions in large negative ion sources

Takado, Naoyuki*; Tobari, Hiroyuki; Inoue, Takashi; Hanatani, Junji*; Hatayama, Akiyoshi*; Hanada, Masaya; Kashiwagi, Mieko; Sakamoto, Keishi

The production and transport processes of H$$^{0}$$ atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code was applied to the large JAEA 10 ampere negative ion source under the Cs-seeded condition to obtain a spatial distribution of surface-produced H$$^{-}$$ ions. In the H$$^{0}$$ atom transport process, the energy relaxation of the H$$^{0}$$ atoms, which affects the surface H$$^{-}$$ ion production rate, is taken into account. The result indicates that the surface H$$^{-}$$ ion production is enhanced near the high-electron-temperature region where H$$^{0}$$ atom production is localized.



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Category:Physics, Applied



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