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Report No.

NIEL analysis of radiation degradation parameters derived from quantum efficiency of triple-junction space solar cell

Sato, Shinichiro; Miyamoto, Haruki; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Morioka, Chiharu*; Kawano, Katsuyasu*; Oshima, Takeshi

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells due to proton irradiation is performed with the use of a one-dimensional optical device simulator; PC1D, and the degradation level in each sub-cell is evaluated. By fitting external quantum efficiencies of the 3J solar cells degraded by proton irradiation, the short-circuit currents ($$I_{SC}$$) and open-circuit voltages ($$V_{OC}$$) are simulated. The validity of this model is confirmed by comparing the results of both $$I_{SC}$$ and $$V_{OC}$$ to the experimental data. The carrier removal rate of base layer ($$R_C$$) and the damage coefficient of minority carrier diffusion length ($$K_L$$) in each sub-cell are also estimated. In addition, NIEL (Non-Ionizing Energy Loss) analysis for both radiation degradation parameters $$K_L$$ and $$R_C$$ is discussed.



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