Fabrication of nanowires by varying energy microbeam lithography using heavy ions at the TIARA

Kamiya, Tomihiro; Takano, Katsuyoshi; Ishii, Yasuyuki; Sato, Takahiro; Oikawa, Masakazu*; Okubo, Takeru; Haga, Junji*; Nishikawa, Hiroyuki*; Furuta, Yusuke*; Uchiya, Naoyuki*; Seki, Shu*; Sugimoto, Masaki

In TIARA facility of Japan Atomic Energy Agency (JAEA) Takasaki, three-dimensional micro/nano structures with high aspect ratio based on cross linking process in negative resist such as SU-8 have been produced by a technique of mask less ion beam lithography. By bombarding high-energy heavy ions such as 450 MeV Xe to SU-8, a nanowire could be produced just with a single ion hitting. Then we tried to produce nanowires, of which both ends were fixed in the three-dimensional structure. This paper shows a preliminary experiment using a combination of 15 MeV Ni ion microbeam patterning and the 450 MeV Xe hitting on SU-8.