Effects of oxygen annealing on dielectric properties of LuFeCuO $_{4}$

Matsuo, Yoji*; Suzuki, Muneyasu*; Noguchi, Yuji*; Yoshimura, Takeshi*; Fujimura, Norifumi*; Yoshii, Kenji ; Ikeda, Naoshi*; Mori, Shigeo*

We have investigated the physical properties of LuFeCuO $_{4}$ , which is a derivative material of the electronic ferroelectric LuFe $_{2}$ O $_{4}$ . From electron diffraction measurements at room temperature, ionic ordering of Fe $^{3+}$ and Cu $^{2+}$ in the a-b plane was observed. This ordering is similar to that in LuFe $_{2}$ O $_{4}$ and has an electric dipole. The observation of small domains (5-10 nm) indicates the presence of polar regions. Dielectric measurements showed that a peak of dielectric constant appeared at around 500 K, and the peak value was about 1000, indicating that LuFeCuO $_{4}$ is a dielectric material. We will present the experimental data on the samples prepared under high-pressure oxygen.

Language	:	English
Journal	:	Japanese Journal of Applied Physics
Volume	:	47
Number	:	11
Pages	:	p.8464 - 8467
Publication Year/Month	:	2008/11
Meeting title	:	第25回強誘電体応用会議(FMA-25)
Held date	:	2008/05
Location (city)	:	京都
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1143/JJAP.47.8464
DOI for research data	:
Keywords	:	no keyword
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Press Release	:
Article of JAEA R&D Review	:
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Registration No. : BB20080229
JAEA Abstracts No. : 37000027
Paper Submission No. : 4999

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