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In situ irradiation and measurement of triple junction solar cells at Low Intensity, Low Temperature (LILT) conditions

Harris, R. D.*; Imaizumi, Mitsuru*; Walters, R. J.*; Lorentzen, J. R.*; Messenger, S. R.*; Tischler, J. G.*; Oshima, Takeshi; Sato, Shinichiro; Sharps, R. P.*; Fatemi, N. S.*

The performance of triple junction InGaP/GaAs/Ge solar cells have been studied following low temperature irradiation while using low intensity illumination. High energy electron and proton irradiations have been performed with cell characterization carried out in situ at the irradiation temperature with no intermediate temperature changes. As such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements which permitted the extraction of the four principle solar cell parameters: short circuit current, open circuit voltage, maximum power, and fill factor. In addition, quantum efficiency measurements were made prior to and following the irradiations. The low temperature irradiations were followed by a room temperature anneal to determine if any subsequent recovery was present.

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Category:Engineering, Electrical & Electronic

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