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Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV

260MeVネオンイオン集束マイクロビームによってシリコンフォトダイオードから得られた過渡電流マッピング

平尾 敏雄; 小野田 忍; 及川 将一*; 佐藤 隆博; 神谷 富裕; 大島 武

Hirao, Toshio; Onoda, Shinobu; Oikawa, Masakazu*; Sato, Takahiro; Kamiya, Tomihiro; Oshima, Takeshi

数百MeV級の高エネルギーイオン入射により半導体に誘起される電荷の動的挙動を明らかにするため、サイクロトロンビームラインで開発された集束型数百MeVイオンマイクロビームを用いたイオンビーム誘起過渡電流(TIBIC)測定システムを構築した。これにより、高崎量子応用研究所イオン照射研究施設(TIARA)において数MeVから数百MeVの重イオンマイクロビームを用いたTIBIC測定が可能となった。本研究では、260MeVのNeイオンマイクロビームをシリコンフォトダイオードに照射しTIBIC測定を行い、過渡電流波形のマッピングに成功した。得られた結果を、デバイスシミュレーション(TCAD)を用いて解析することで、数百MeV級高エネルギー重イオンマイクロビームによる電荷挙動を解明した。

Single-Event Effects (SEEs) are triggered when an energetic heavy ion traverses a sensitive area in electric devices. Since the SEEs occur due to dense charge which is created along to ion track within the order of picoseconds, the measurement of such a high speed current signals is very important. Furthermore, the size of dense charge and their concentration depend on LET as well as energy of incident ions. This means that the transient currents induced in electronic devices by incidence of ions with various energies and LETs should be investigated to clarify the mechanism of SEEs for electronic devices. Especially, the evaluations using heavy ions with high energies more than a several hundred MeVs are very important to understand the mechanism of SEEs observed in space. For this aim, we have developed an irradiation system of focused heavy ion microbeams at a several hundreds of MeVs at JAEA. In this paper, we study transient currents induced in Si photodiodes using the focused heavy ion microbeam irradiation system. The mapping of charge collected from the photodiodes irradiated with 260 MeV $$^{20}$$Ne$$^{7+}$$ ion microbeams, which is firstly observed in the world, will be presented. In addition, the difference in transient currents induced by ions at several hundred MeVs from ions at tens MeVs is discussed using TCAD (Technology Computer Aided Design) and GUN theorem.

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パーセンタイル:61.95

分野:Instruments & Instrumentation

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