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Report No.

In situ observation of InP(001) growth under metalorganic chemical vapor deposition using synchrotron radiation source

Fujikawa, Seiji; Kawamura, Tomoaki*; Bhunia, S.*; Watanabe, Yoshio*

Growth mechanism of InP(001) of metalorganic chemical vapor deposition has been studied by X-ray reflectivity and grazing incidence X-ray diffraction (GIXD). The changes of reflectivity signal suggested that growth mode depended on substrate temperature, and particularly the step-flow growth mode was dominant at more than 550$$^{circ}$$C. Monitoring the fractional-order reflection of (2$$times$$1)-InP(001) using GIXD during the step-flow growth, the changes of fractional-order reflection suggested that indium atom migrate on the substrate surface more than 1 minute during the growth.



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