EPR identification of intrinsic defects in SiC

Isoya, Junichi*; Umeda, Takahide*; Mizuochi, Norikazu*; Son, N. T.*; Janzn, E.*; Oshima, Takeshi

Intrinsic defects in silicon carbide (SiC) were indentified using Electron Paramagnetic Resonance (EPR). The samples used in this study were cubic (3C) and hexagonal (4H, 6H) SiC. The angular dependence of hyperfine structure of $^{29}$ Si, $^{13}$ C was compared to the results from the first principle calculations As the results, positively charged carbon vacancies in and sites (V $_{C}$ $^{+}$ (), V $_{C}$ $^{+}$ ()), negatively charged carbon vacancy (V $_{C}$ $^{-}$ ()), and neutoral, positively and negatively charged di-vacancies of silicon vacancy and carbon vacancy ([V $_{Si}$ V $_{C}$ ] $^{0}$ , [V $_{Si}$ V $_{C}$ ] $^{+}$ , [V $_{Si}$ V $_{C}$ ] $^{-}$ ) were identified.

Language	:	English
Journal	:	Physica Status Solidi (B)
Volume	:	245
Number	:	7
Pages	:	p.1298 - 1314
Publication Year/Month	:	2008/07
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Paper URL	:	https://doi.org/10.1002/pssb.200844209
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Keywords	:	no keyword
Research Facility	:	電子加速器
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Article of JAEA R&D Review	:
Cooperating Institute	:	筑波大学

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InCites™	:	Percentile:88.1 Category:Physics, Condensed Matter
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Registration No. : AA20080428
JAEA Abstracts No. : 36001301
Paper Submission No. : 4596

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