Transient currents induced in 6H-SiC MOS capacitors by oxygen ion incidence

Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Kawano, Katsuyasu*

Single event transient currents induced in 6H-SiC Metal-Oxide-Semiconductors (MOS) capacitors by using oxygen ions are investigated. Charges collected from the MOS capacitors are estimated by the integration of transient currents. Applying the drift-diffusion model to the collected charges, the diffusion length of electron is estimated. Transient currents induced in the -ray irradiated MOS capacitors are also investigated. No significant change in the transient currents is observed after -ray irradiation.

Language	:	English
Journal	:	Materials Science Forum
Volume	:	615-617
Number	:
Pages	:	p.517 - 520
Publication Year/Month	:	2009/00
Meeting title	:	7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)
Held date	:	2008/09
Location (city)	:	Barcelona
Location (country)	:	Spain
Patent information	:
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DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	産業技術総合研究所

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Registration No. : BB20081617
JAEA Abstracts No. : 37000508
Paper Submission No. : 5505

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