Refine your search:     
Report No.

Effect of Fe/Si ratio on epitaxial growth of Fe$$_{3}$$Si on Ge substrate

Kumano, Mamoru*; Ando, Yuichiro*; Ueda, Koji*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe$$_{3}$$Si on Ge substrate have been investigated in a wide range of growth temperatures (60$$sim$$300 $$^{circ}$$C). From XRD measurements, it was found that Fe$$_{3}$$Si layers were epitaxially grown on Ge(111) substrates at 60$$sim$$200 $$^{circ}$$C under the stoichiometric (Fe:Si = 3:1) and non-stoichiometric (Fe:Si = 4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe$$_{3}$$Si/Ge interfaces began at a growth temperature of 300 $$^{circ}$$C. In the case of MBE under the stoichiometric condition, the crystallinity of Fe$$_{3}$$Si is significantly improved compared to the non-stoichiometric condition. As a result, very low $$chi$$$$_{min}$$ was obtained in a wide temperature (60$$sim$$200 $$^{circ}$$C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe$$_{3}$$Si/Ge structures with atomically flat interfaces were realized at a low temperature ($$sim$$200 $$^{circ}$$C) under the stoichiometric condition.



- Accesses





[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.