Si on Ge substrateKumano, Mamoru*; Ando, Yuichiro*; Ueda, Koji*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*
The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of FeSi on Ge substrate have been investigated in a wide range of growth temperatures (60
300 
C). From XRD measurements, it was found that FeSi layers were epitaxially grown on Ge(111) substrates at 60200 C under the stoichiometric (Fe:Si = 3:1) and non-stoichiometric (Fe:Si = 4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at FeSi/Ge interfaces began at a growth temperature of 300 C. In the case of MBE under the stoichiometric condition, the crystallinity of FeSi is significantly improved compared to the non-stoichiometric condition. As a result, very low 
was obtained in a wide temperature (60200 C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type FeSi/Ge structures with atomically flat interfaces were realized at a low temperature (200 C) under the stoichiometric condition.
Language |
: | English |
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Journal |
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Volume |
: | 11 |
Number |
: | 6 |
Pages |
: | p.481 - 485 |
Publication Year/Month |
: | 2007/00 |
Meeting title |
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Held date |
: | 2007/10 |
Location (city) |
: | Washington, D.C. |
Location (country) |
: | U.S.A. |
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: |
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Keywords |
: | no keyword |
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