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Report No.
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Identification of the negative Di-carbon antisite defect in n-type 4H-SiC

Gali, A.*; Umeda, Takahide*; Janz$'e$n, E.*; Morishita, Norio; Oshima, Takeshi; Isoya, Junichi*

Carbon antisite defects in Silicon Carbide (SiC) were studied using Electron Spin Resonance (ESR) and first principle calculations. The samples used in this study were n-type 4H-SiC, and these samples were irradiated with MeV electrons at 10$$^{18}$$/cm$$^{2}$$ in temperature range between 300 and 800$$^{circ}$$C. As the results of ESR measurements, signals labeled HEI5 and HEI6, which have S=1/2 and C$$_{1h}$$ symmetry were observed. By the detailed measurements of $$^{29}$$Si and $$^{13}$$C hyperfine satellite, and first principle calculations, HEI5 and HEI6 were identified to be di-carbon antisite at cubic and hexagonal sites, respectively.

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