Pulsed EPR studies of the T $_{V2a}$ center in 4-SiC

Isoya, Junichi*; Umeda, Takahide*; Mizuochi, Norikazu*; Oshima, Takeshi

To indentify intrinsic defects in silicon carbide (SiC), a T $_{V2a}$ center in 4-SiC was investigated using pulsed electron paramagnetic resonance (EPR). The T $_{V2a}$ is a center with S=3/2 and C $_{3V}$ symmetry, and in previous studies, the origin of the T $_{V2a}$ is thought to be a defects of negatively charged Si vacancy (V $_{Si}$ $^{-}$ ). In this study, T $_{V2a}$ centers were introduced in n-type 4-SiC samples by MeV range electron irradiation at 10 $^{18}$ /cm $^{2}$ . As a result of EPR, pulsed EPR and ENDOR measurements, the origin of the T $_{V2a}$ center can be identified to be not a simple V $_{Si}$ $^{-}$ defect but the complex between V $_{Si}$ $^{-}$ with Next Nearest Neighbors.

Language	:	English
Journal	:	Materials Science Forum
Volume	:	615-617
Number	:
Pages	:	p.353 - 356
Publication Year/Month	:	2009/00
Meeting title	:	7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)
Held date	:	2008/09
Location (city)	:	Barcelona
Location (country)	:	Spain
Patent information	:
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DOI for research data	:
Keywords	:	no keyword
Research Facility	:	電子加速器
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	筑波大学

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Registration No. : BB20081959
JAEA Abstracts No. : 37000505
Paper Submission No. : 5502

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Pulsed EPR studies of the T center in 4-SiC

Pulsed EPR studies of the T $_{V2a}$ center in 4-SiC