Mechanisms of unexpected reduction in hole concentration in Al-doped 4-SiC by 200 keV electron irradiation

Matsuura, Hideharu*; Minohara, Nobumasa*; Oshima, Takeshi

The hole concentration in Al-doped -type 4-SiC irradiated with electrons at 200 keV was investigated. By the irradiation at 200 keV electrons, only substitutional Carbon atoms (C) in SiC can be displaced. The reduction in hole concentration due to the electron irradiation was found to be mainly due to a decrease in Al acceptor concentration and not due to an increase in defect concentration. Based on the analysis of temperature dependence of hole concentration, two types of acceptor levels were detected and the density and energy level of each acceptor were determined.