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Report No.
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Real-time XPS measurements for carbonization and oxidation processes at Si(001) surfaces

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

In this study, real-time XPS was applied to investigate the effect of lattice strain due to the dimerization on an Si(001) surface. The Si$$_{1-x}$$C$$_{x}$$ alloy layer was formed on a p-type Si(001) surface by C$$_{2}$$H$$_{4}$$ exposure. Carbonization and oxidation reactions were observed by XPS to investigate the oxidation rate and behavior of C atom. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. The photoelectron spectroscopy measurement of C1s, O1s and Si2p was performed during carbonization and oxidation on an Si(001) surface. Oxidation rate on carbonized Si(001) surface was faster than that on clean Si(001) surface. Since C1s intensity was almost constant during oxidation, it is suggested that C atoms did not exist in SiO$$_{2}$$ and diffuse into the Si substrate.

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