NIEL analysis of charge collection efficiency in silicon carbide diodes damaged by gamma-rays, electrons and protons

Oshima, Takeshi; Onoda, Shinobu; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*

The reduction of Charge Collection Efficiency (CCE) in silicon carbide (SiC) diodes due to -ray, 1MeV electron, and 65MeV proton irradiations is discussed. The pn junction diodes were fabricated on SiC epitaxial layers using hot implantation. The transient currents induced by ion beam were measured using Transient Ion Beam Induced Current (TIBIC) measurement systems. The CCE are estimated from the integration of the transient current. The diodes were irradiated with either -rays, electrons at 1MeV, or protons at 65 MeV to create damage in the diodes. The CCE in the irradiated diodes was also measured. The results obtained in these measurements were evaluated using a concept of Non Ionizing Energy Loss (NIEL).