Real-time XPS observation for oxidation processes of SiC alloy layer on Si(001) substrate

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

We investigated that the effect of lattice strain due to displacement for hetero atom on an Si(001) surface by real-time XPS. The SiC alloy layer was formed on a p-type Si(001) surface by carbonization with CH exposure. The oxidation kinesics on the carbonized surface was compared with that on a clean Si surface. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. The X-ray photoelectron spectroscopy measurement of C1s, O1s and Si2p was performed during carbonization and oxidation. Oxidation rate on the carbonized surface was faster than that on the clean surface. C1s intensity normalized by Si bulk intensity was almost constant during surface oxidation and then decreased slowly during interface oxidation. It suggests that C atom did not exist in SiO layer and diffuse into the Si substrate.