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Real-time measurements of chemical bonding states and substrate curvature during initial oxidation of Si(110) surface

Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka ; Asaoka, Hidehito  ; Yamazaki, Tatsuya

Time evolution of chemical bonding states and substrate curvature were measured by SR-PES (Synchrotron Radiation Photoemission Spectroscopy) and MOS (Multi-beam Optical Sensor) methods during initial oxidation of Si(110) surface. The SR-PES measurements were performed at the surface chemistry experimental station in the BL23SU of SPring-8. Oxygen uptake was a Langmuir type so that oxygen adsorption took place randomly in the conditions of 1.5$$times$$10$$^{-6}$$ Pa and 873 K. In that case, Although Si$$^{3+}$$ and Si$$^{4+}$$ increased rapidly in the beginning of oxidation, Si$$^{2+}$$ was a minor component. This fact suggests that oxidation rate of inter-plane Si-Si bonds (B-bonds), which make a chain in the (-110) direction, is larger than that of in-plane Si-Si bonds (A-bonds) so that Si$$^{3+}$$ is observed strongly. The variation of substrate curvature also indicates that oxidation of B-bonds is faster than that of A-bonds, which makes a strong compression stress in the (-110) direction.

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