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Report No.

Ion generation method for TIARA Ion Implanter

Yamada, Keisuke; Okoshi, Kiyonori ; Saito, Yuichi; Orimo, Takao*; Omae, Akiomi*; Yamada, Naoto*; Mizuhashi, Kiyoshi

The 400 kV ion implanter at the Takasaki Ion Accelerators for Advanced Radiation Application facility (TIARA) provides ion beams for various experiments of research and development (R&D's) mainly on materials science and biotechnology using Freeman ion sources. Two methods of ionization are generally used to a Freeman ion source. In one method, a sample gas is directly fed to the plasma chamber, and in the other, vapor of a solid material having high vapor pressure is vaporized by an oven and fed. Those methods, however, can supply limited number of ion species of those required from various R&D's. We have developed new methods available to materials which are difficult to vaporize by an oven: the disc method for high melting point materials, the SF$$_{6}$$ plasma method for high melting point and low vapor pressure materials, the filament method for metals with melting point higher than 2400 $$^{circ}$$C, and one of them is chosen according to the nature of a material. Forty four ion species from hydrogen to bismuth are generated by using the Freeman ion sources to date. Furthermore, a small ECR (electron cyclotron resonance) ion source is also developed to generate multiply charged ions for acceleration to higher energies.



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