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Electronic structure of Ga$$_{1-x}$$Cr$$_{x}$$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

Song, G.*; Kobayashi, Masaki*; Hwang, J. I.*; Kataoka, Takashi*; Takizawa, Masaru*; Fujimori, Atsushi; Okochi, Takuo; Takeda, Yukiharu  ; Okane, Tetsuo ; Saito, Yuji ; Yamagami, Hiroshi; Chang, F.-H.*; Lee, L.*; Lin, H.-J.*; Huang, D.-J.*; Chen, C. T.*; Kimura, Shigeya*; Funakoshi, Masayuki*; Hasegawa, Shigehiko*; Asahi, Hajime*

The electronic structure of the magnetic semiconductor Ga$$_{1-x}$$Cr$$_{x}$$N, and the effect of Si doping on it have been investigated by photoemission and soft X-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent when substituting for Ga and that Cr 3$$d$$ states appear within the band gap of GaN just above the N 2$$p$$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$$p$$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical-potential shift and the formation of a small amount of Cr$$^{2+}$$ species caused by electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.

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Category:Materials Science, Multidisciplinary

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