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Observation of itinerant Ce 4$$f$$ electronic states in CeIrSi$$_3$$ studied by angle-resolved Ce 3$$drightarrow 4f$$ resonance photoemission spectroscopy

Okochi, Takuo*; Toshimitsu, Takafumi*; Yamagami, Hiroshi; Fujimori, Shinichi  ; Yasui, Akira; Takeda, Yukiharu  ; Okane, Tetsuo ; Saito, Yuji ; Fujimori, Atsushi; Miyauchi, Yuichiro*; Okuda, Yusuke*; Settai, Rikio*; Onuki, Yoshichika*

We have applied angle-resolved Ce 3$$d{rightarrow}$$4$$f$$ resonance photoemission spectroscopy to the non-centrosymmetric pressure-induced superconductor CeIrSi$$_3$$ and obtained the 4$$f$$ band-structure and Fermi surfaces. We have found that the Ce 4$$f$$ states are located mainly near the Fermi level and that the photoemission intensity derived from the dispersive conduction bands across the Fermi level shows considerable resonant enhancement. In addition, the band structure and Fermi surfaces of CeIrSi$$_3$$ are different from those of the non-$$f$$ reference compound, LaIrSi$$_3$$ and the difference is well explained by the band structure calculated within the local density approximation (LDA). These results strongly suggest that the Ce 4$$f$$ electrons in CeIrSi$$_3$$ are well hybridized with conduction bands and form itinerant electronic states.

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Category:Physics, Multidisciplinary

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