Surface characterization of -FeSi films by synchrotron radiation fabricated with ion beam sputter deposition

Esaka, Fumitaka  ; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Magara, Masaaki  ; Kimura, Takaumi ; Yamaguchi, Kenji; Shamoto, Shinichi  

Synchrotron radiation excited XPS and XAS were utilized to investigate chemical states of the surface of -FeSi films fabricated by ion beam sputter deposition. The analysis was performed at the BL-13C of the Photon Factory in KEK. In the XPS analysis, depth profiling was carried out by changing the kinetic energy of photoelectrons. As a result, the relative ratios of SiO and SiO increased with decreasing the kinetic energy of photoelectrons. Simulation results indicated that the SiO formed at the upper layer and the SiO formed at the lower layer of the surface. These results show that these analytical methods enable us to investigate chemical states of solid surfaces in detail.