Microfabrication using proton beam writing at JAEA-TIARA

Takano, Katsuyoshi; Sato, Takahiro; Ishii, Yasuyuki; Kamiya, Tomihiro; Okubo, Takeru; Sugimoto, Masaki; Nishikawa, Hiroyuki*; Seki, Shu*

In TIARA facility of Japan Atomic Energy Agency (JAEA) Takasaki, microscopic bridge structures on silicon wafer substrate were produced with the proton beam writing, utilising a difference of projected range for SU-8 photoresist films between the incidence energy of 1 MeV and 3 MeV. The beam length of the brige structure was 50 m, and the distance between the beam and the substrate was 30 m.