Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles

Sato, Shinichiro; Oshima, Takeshi; Imaizumi, Mitsuru*

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) space solar cell, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J solar cells from fitting the external quantum efficiencies for sub-cells. In this modeling, carrier removal rate of base layer (R) and damage coefficient of minority carrier diffusion length () in each sub-cell are considered as radiation degradation parameters. NIEL (Non-Ionizing Energy Loss) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J solar cell can be predicted from the results of degradation level in the each sub-cell estimated from correlativity between NIEL and both radiation degradation parameters.