Effects for Si oxidation mechanisms by carbon atoms in the SiO $_{2}$ /Si(001) interface

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

The oxidation kinetics of Si $_{1-x}$ C $_{x}$ layer prepared with C $_{2}$ H $_{4}$ exposure was observed by real-time XPS to investigate effects of substrate stress due to displacement of hetero atom on a p-type Si(001) surface. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. Oxidation rate on the Si $_{1-x}$ C $_{x}$ layer was larger than that of a clean surface. It was found that carbon atoms diffused into substrate without CO or CO $_{2}$ desorption during oxidation. Furthermore "an unified Si oxidation reaction model mediated by point defect generation" could explain these results with correlation.

Language	:	Japanese
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Meeting title	:	第14回ゲートスタック研究会; 材料・プロセス・評価の物理
Held date	:	2009/01
Location (city)	:	三島
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学多元物質科学研究所

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Registration No. : BB20083433
JAEA Abstracts No. :
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Effects for Si oxidation mechanisms by carbon atoms in the SiO/Si(001) interface

Effects for Si oxidation mechanisms by carbon atoms in the SiO $_{2}$ /Si(001) interface