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Report No.
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Real-time observation for carbonation and oxidation processes at Si(001) surface by high briliance synchrotron radiation XPS

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

We investigated effects of lattice strain due to displacement of hetero atoms on a p-type Si(001) surface during oxidation. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. In order to change the lattice strain, an Si$$_{1-x}$$C$$_{x}$$ layer was formed by carbonization with C$$_{2}$$H$$_{4}$$ exposure. Oxidation rate on the carbonized surface was faster than that on a clean surface. C1s photoemission intensity normalized by Si bulk intensity was almost constant during oxidation at the surface and gradually decreased at the interface. It was suggested that C atoms did not exist in the SiO$$_{2}$$ layer and diffused into the Si substrate, and the growth of oxide was related with the normalized C1s intensity.

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