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Role of strain in SiO$$_{2}$$/Si interfacial oxidation, 1; Behavior of doped carbon atom

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

The oxidation reaction of Si$$_{1-x}$$C$$_{x}$$ alloy layer which was formed with C$$_{2}$$H$$_{4}$$ exposure on a p-type Si(001) surface is observed by real-time photoemission spectroscopy to investigate the role of lattice strain. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. Oxidation rate on the Si$$_{1-x}$$C$$_{x}$$ alloy layer was larger than that on a clean surface at interface oxidation. The number of carbon atom was constant for surface oxidation and reduced for interface oxidation suggesting that carbon atoms did not exist in the SiO$$_{2}$$ layer and diffused into an Si substrate without CO or CO$$_{2}$$ desorption during oxidation. Then, there was good correlation between the oxidation rate and the number of carbon atom. These results could be explained with the unified Si oxidation reaction model mediated by point defect generation.

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