First-principles molecular dynamics study on SiO $_{2}$ /4H-SiC C-face oxidation process; Effect of temperature

Onuma, Toshiharu*; Miyashita, Atsumi; Iwasawa, Misako*; Yoshikawa, Masahito; Tsuchida, Hidekazu*

no abstracts in English

Language	:	Japanese
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Meeting title	:	2009年(平成21年)春季第56回応用物理学関係連合講演会
Held date	:	2009/03
Location (city)	:	つくば
Location (country)	:	日本
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Keywords	:	no keyword
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Cooperating Institute	:	電力中央研究所

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Registration No. : BB20083632
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First-principles molecular dynamics study on SiO/4H-SiC C-face oxidation process; Effect of temperature

First-principles molecular dynamics study on SiO $_{2}$ /4H-SiC C-face oxidation process; Effect of temperature