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Organic contaminant detection of silicon wafers using negative secondary ions induced by cluster ion impacts

Hirata, Koichi*; Saito, Yuichi; Chiba, Atsuya; Narumi, Kazumasa

Emission yields of carbon and hydrogenated carbon cluster secondary ions CpHq$$^pm$$ (p$$ge1$$, q$$ge0$$) originating from organic contaminants on a silicon wafer are compared between monoatomic (0.5 MeV/atom-C1$$^+$$) and cluster ion (0.5 MeV/atom-C8$$^+$$) impacts using time-of-flight (TOF) secondary ion mass spectrometry. CpHq$$^pm$$ for the cluster ion impact exhibits the highest emission yield per incident atom among CpHq$$^pm$$ with the same p number. The highest relative CpHq$$^pm$$ emission yield for the cluster ion impact reaches $$simeq 20$$ and $$simeq 60$$ times higher in comparison with those of CpHq$$^-$$ and CpHq$$^+$$ with the same p number for the impact of the monoatomic ion with the same velocity, respectively. Combination of negative secondary ion TOF measurements with cluster impact ionization is a promising tool for highly sensitive detection of organic-contaminants on silicon wafers.

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Category:Physics, Applied

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