Experimental results of the -ray imaging capability with a Si/CdTe semiconductor Compton camera

シリコン及びテルル化カドミウム半導体コンプトンカメラの線イメージング性能

武田 伸一郎*; 青野 博之*; 奥山 翔*; 石川 真之介*; 小高 裕和*; 渡辺 伸*; 国分 紀秀*; 高橋 忠幸*; 中澤 知洋*; 田島 宏康*; 河地 有木

Takeda, Shinichiro*; Aono, Hiroyuki*; Okuyama, Sho*; Ishikawa, Shinnosuke*; Odaka, Hirokazu*; Watanabe, Shin*; Kokubun, Motohide*; Takahashi, Tadayuki*; Nakazawa, Kazuhiro*; Tajima, Hiroyasu*; Kawachi, Naoki

A semiconductor Compton camera that combines silicon (Si) and Cadmium Telluride (CdTe) detectors was developed, and its imaging capability was examined with various kinds of -ray targets such as a point source, arranged point sources and an extended source. The camera consists of one double-sided Si strip detector and four layers of CdTe pad detectors, and was designed to minimize the distance between a scatterer and the target. This is because the spatial resolution with Compton imaging improves as the target approaches the scatterer. This new camera realizes a minimum distance of 25 mm. By placing the target at a distance of 30 mm from the detector, resolving power better than 3 mm was demonstrated experimentally for a 364 keV (I) -ray. Positional determination with accuracy of 1 mm was also demonstrated. As a deconvolution method, we selected the iteration algorithm (called List-Mode Expectation-Maximizing Maximum Likelihood), and applied it to several kinds of experimental data. The Compton back projection images of the arranged point sources and an extended object were successfully deconvolved.