Quantitative analyses of impurity silicon-carbide (SiC) and high-purity-titanium by neutron activation analyses based on k standardization method; Development of irradiation silicon technology in productivity using research reactor (Joint research)

Motohashi, Jun ; Takahashi, Hiroyuki; Magome, Hirokatsu; Sasajima, Fumio; Tokunaga, Okihiro*; Kawasaki, Kozo*; Onizawa, Koji*; Isshiki, Masahiko*

JRR-3 and JRR-4 have been providing neutron-transmutation-doped silicon (NTD-Si) by using the silicon NTD process. We have been considering to introduce the neutron filter, which is made of high-purity-titanium, into uniform doping. Silicon carbide (SiC) semiconductors doped with NTD technology are considered suitable for high power devices with superior performances to conventional Si-based devices. The impurity contents in the high-purity-titanium and SiC were analyzed by neutron activation analyses (NAA) using k standardization method. Analyses showed that the number of impurity elements detected from the high-purity-titanium and SiC were 6 and 9, respectively. Among these impurity elements, Sc detected from the high-purity-titanium and Fe detected from SiC were comparatively long half life nuclides. From the viewpoint of exposure in handling them, we need to examine the impurity control of materials.