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Role of strain in SiO$$_{2}$$/Si interfacial oxidation, 2; Carbon diffusion during 2D oxide island growth

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*

The oxidation reaction of Si$$_{1-x}$$C$$_{x}$$ alloy layer which was formed with C$$_{2}$$H$$_{4}$$ exposure on a p-type Si(001) surface was observed by real-time XPS to investigate the role of lattice strain. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. When Si$$_{1-x}$$C$$_{x}$$ alloy layer was oxidized at 660 $$^{circ}$$C, oxidation mode was 2D oxide island growth. Etching advanced as well as oxidation films growth. Nearly 45 layers were etched for 7000 s from oxidation start regardless of oxide coverage was nearly 3 percents. This suggested SiO desorption occurred. In this result, Si$$_{1-x}$$C$$_{x}$$ alloy layer that was formed on surface 4th layers should be completely rejected, but C 1s intensity that was normalized by Si 2p bulk intensity was constant. Therefore it was suggested carbon atoms diffused into Si substrate in SiO desorption.

Language

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Japanese

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Meeting title

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2009年秋季第70回応用物理学会学術講演会

Held date

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2009/09

Location (city)

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富山

Location (country)

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日本

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Keywords

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no keyword

Research Facility

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SPring-8(大型放射光施設)

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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東北大学多元物質科学研究所

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- Accesses

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