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Doping effect on charge ordered structure in RFe$$_{2}$$O$$_{4}$$(R=Lu and Yb)

Matsuo, Yoji*; Mori, Shigeo*; Hirata, Akihiko*; Yoshii, Kenji  ; Ikeda, Naoshi*

RFe$$_{2}$$O$$_{4}$$ (R= Ho-Lu,Y) is a novel ferroelectric material in which ferroelectric polarization is caused by the charge ordering (CO) of Fe$$^{2+}$$ and Fe$$^{3+}$$. In this work we investigated the CO structure and dielectric/magnetic properties in RFe$$_{2}$$O$$_{4}$$ and RFeCuO$$_{4}$$ (R=Lu,Yb, M=Cu,Co) by a transmission electron microscopy (TEM), combining with dielectric and magnetic measurements. LuFeCuO$$_{4}$$ is a dielectric compound, which shows the characteristic low-frequency dielectric dispersion. In addition, the Cu$$^{2+}$$ substitution in LuFe$$_{2}$$O$$_{4}$$ suppressed the formation of the CO structure and induced characteristic polar nanodomains with the 5-10nm size. Magnetic measurement revealed that LuFeCuO$$_{4}$$ shows the magnetic transition around 50K, which is much lower than the magnetictransition temperature of 250K in LuFe$$_{2}$$O$$_{4}$$. Our experimental results suggest that the polar nanodomains should be responsible for the magnetic/dielectric properties in RFeMO$$_{4}$$.



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