/Si by ion implantationNinakuchi, Yuki*; Saito, Masahiro*; Isshiki, Toshiyuki*; Nishio, Koji*; Nishiyama, Fumitaka*; Yamamoto, Shunya; Sasase, Masato*; Takahiro, Katsumi*
In the course of Ag implantation into thermally grown SiO films, we found well-ordered Ag nanoparticles in the vicinity of SiO/Si interface. SiO films of 300 nm thick were grown on single crystalline Si(111) substrates. The SiO/Si samples were implanted with 350 keV-Ag ions to a fluence of 1
10
ions/cm
. The Ag-implanted SiO/Si samples were characterized by Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and cross sectional transmission electron microscopy (XTEM). The Ag concentration depth profiles obtained by RBS and XPS were non-Gaussian, indicating that Ag atoms diffused significantly. XTEM revealed that well-arranged Ag nanoparticles of 30 nm and 2 nm in diameter were distributed near the projected range and the SiO/Si interface, respectively.
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: | 15th International Symposium on Radiation Effects in Insulators (REI-15) |
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: | 2009/08 |
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: | Padova |
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: | Italy |
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