UV and visible light emitting fused-silica substrates fabricated by Si-ion implantation

Umenyi, A. V.*; Hommi, Masashi*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Inoue, Aichi; Yoshikawa, Masahito

Various works on silicon (Si)-based luminescent materials utilizing the quantum confinement effect, such as Si nanocrystals (Si-NC's), have been reported. Typical fabrication methods of Si-NC's are co-sputtering of Si and SiO, Si-ion implantation into SiO plates, and so on. In this work, we observed ultraviolet (UV)-light emission from Si-ion-implanted fused-silica substrates under different implanting conditions. The implantation energy was 80 keV, and the implantation amount was 210 ions/cm. The Si-implanted substrates were annealed at 11001250C. Photoluminescence (PL) spectra were measured with excitation using a He-Cd laser. UV-PL spectra having peaks around a wavelength of 370 nm were observed from all the samples. The UV-peak wavelengths of the samples are almost the same in spite of the various annealing temperatures. Si-ion-implanted fused-silica are expected to be useful as light sources for next-generation optical-disk systems.