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Identification of a Frenkel-pair defect in electron-irradiated 3$$C$$ SiC

Son, N. T.*; Janz$'e$n, E.*; Isoya, Junichi*; Morishita, Norio; Hanaya, Hiroaki; Takizawa, Haruki; Oshima, Takeshi; Gali, A.*

Defects in electron irradiated 3$$C$$-SiC were studied by electron paramagnetic resonance EPR. The spectrum labeled LE1 was observed in $$n$$-type 3$$C$$ SiC after electron irradiation at low temperatures ($$sim$$80-100 K). Supercell calculations of different configurations of silicon vacancy-interstitial Frenkel-pairs, V$$_{rm Si}$$-Si$$_{rm i}$$, were carried out. Comparing the data obtained from experiments using EPR and supercell calculations, the LE1 center is assigned to the Frenkel-pair between V$$_{rm Si}$$ and a second neighbor Si$$_{rm i}$$ interstitial along the [100] direction in the 3+ charge state. In addition, a path for the migration of Si$$_{rm i}$$$$^{4+}$$ was found in 3$$C$$ SiC. In samples electron-irradiated at low temperatures, the LE1 Frenkel-pair was found to be the dominating defect whereas EPR signals of single vacancies were not detected. The center disappears after warming up the samples to room temperature.

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Percentile:42.11

Category:Materials Science, Multidisciplinary

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