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Report No.
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The Carbon vacancy related EI4 defect in 4H SiC

Son, N. T.*; Carlsson, P.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Magnusson, B.*; Janz$'e$n, E.*

Defects in high-purity semi-insulating 4H SiC irradiated with 2 MeV electrons at room temperature were studied using Electron paramagnetic resonance (EPR). The EPR signal named EI4 defect increased with annealing temperature up to 750 $$^{circ}$$C. Additional large-splitting $$^{29}$$Si hyperfine (hf) structures and $$^{13}$$C hf lines by the interaction with one $$^{13}$$C nucleus were investigated. Based on the observed hf structures, the C$$_{1h}$$ symmetry as well as the annealing behaviour, the EI4 defects is determined to be the complex between two carbon vacancies and a carbon antisite in the neutral charge state, V$$_{C}$$V$$_{C}$$C$$_{Si}$$$$^{0}$$. The formation of the complex is interpreted in terms of the migration of the silicon vacancy and the formation of the carbon vacancy-carbon antisite pair next to a carbon vacancy.

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