C
alloy layer/Si(001) surfacesHozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka 
; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*
In this study, to clarify the behavior of C on the basis of the oxidation kinetics, the oxidation kinetics of an SiC alloy layer was investigated by real-time photoelectron spectroscopy. The SiC alloy layer was formed by exposing an Si(001) surface to ethylene (C
H
). Although the solubility of C in an Si bulk is as small as about 3.5 
10
cm
, it is reported that the solubility of C can be increased by about 10
times due to the dimerization-induced strain. This makes it possible to form an SiC alloy layer on the Si(001) surface with x up to 0.2 but within only the first several Si layers. From a comparison between the changes in the depth profile of C and oxygen uptake, the enhancement of C diffusion is considered in terms of the oxidation-induced strain.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | |
Number |
: | |
Pages |
: | |
Publication Year/Month |
: | |
Meeting title |
: | 2009 International Conference on Solid State Devices and Materials (SSDM 2009) |
Held date |
: | 2009/10 |
Location (city) |
: | Sendai |
Location (country) |
: | Japan |
Paper URL |
: |
|
Keywords |
: | no keyword |
Research Facility |
: | |
Cooperating Institute |
: |
Accesses |
: |
- Accesses |
|---|---|---|
Altmetrics |
: |
[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.
Times Cited Count：