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Strained Si atoms at SiO$$_{2}$$/Si interface during oxidation of Si$$_{1-x}$$C$$_{x}$$ alloy layer on Si(001) surfaces

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*

The oxidation of Si$$_{1-x}$$C$$_{x}$$ surface was studied by real-time X-ray photoelectron spectroscopy using synchrotron radiation to clarify the correlation between oxidation-induced strain and oxidation kinetics. Firstly, a p-type Si(001) surface was carbonized by C$$_{2}$$H$$_{4}$$. Then, the surface was oxidized at 773 K under 5.0$$times$$10$$^{-5}$$ Pa of O$$_{2}$$. After saturation, the O$$_{2}$$ pressure was increased to 1.3$$times$$10$$^{-3}$$ Pa. Si-2p, O-1s, and C-1s photoelectron spectra were measured alternately during oxidation. From the time evolution of C-1s/Si-2p(Si$$^{0}$$) ratio, it was found that the Si$$^{0}$$ composes of bulk and strained Si atoms. The increase of C-1s/Si-2p(Si$$^{0}$$) ratio suggests the concentration of carbon at the interface. After O$$_{2}$$ increase, the interface oxidation proceeds. The rate and the oxidation-induced strain decreased with oxidation. We concluded the interface oxidation rate is enhanced by oxidation-induced strain.

Language

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English

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Meeting title

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International Workshop on Electronic Spectroscopy for Gas-phase Molecules and Solid Surfaces

Held date

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2009/10

Location (city)

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Matsushima

Location (country)

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Japan

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Keywords

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no keyword

Research Facility

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SPring-8(大型放射光施設)

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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東北大学

Accesses

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- Accesses

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