LEED observation for surface structure of graphene on silicon

Takahashi, Ryota*; Miyamoto, Yu*; Handa, Hiroyuki*; Saito, Eiji*; Imaizumi, Kei*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

We have succeeded to form graphene films from 3C-SiC layer on Si substrate by thermal annealing in vacuum (graphene on silicon technique:GOS). In this study, surface structures were observed by LEED and XPS methods to make clear the GOS formation mechanisms. SiC-11 LEED pattern was observed at 3C-SiC(111) surface on the Si substrate showing periodicity of bulk SiC. After graphene formation treatments of 1523 K thermal annealing for 30 min, graphene 11 pattern was observed showing periodicity of graphene. The graphene (11) spots were tilted by 30 deg comparing to the bulk SiC (11) spots. C1s-XPS observation revealed that a peak corresponding to sp $^{2}$ bonding increased with decreasing SiC bulk peak. Consequently, graphene formation from 3C-SiC on Si substrate is same as that on 6H-SiC(0001) substrate.

Language	:	Japanese
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Meeting title	:	第29回表面科学学術講演会
Held date	:	2009/10
Location (city)	:	東京
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Cooperating Institute	:	東北大学

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Registration No. : BB20092558
JAEA Abstracts No. :
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