Time duration of 3C-SiC nucleation in surface carbonization of Si(001); Critical carbon concentration

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*

The 3C-SiC formation on the Si(001) surface by ethylene has been studied. The facts that 3C-SiC nucleation takes place after incuvation time and four Si $_{1-x}$ C $_{x}$ alloy layers are formed during the incuvation time. In this study, critical carbon concentration for SiC nucleation has been investigated. Time evolution of Si2p and C1s photoemission peaks were observed by real-time synchrotron radiation photoemission spectroscopy during exposure Si(001) substrate to ethylene gas at 913 K. Consequently, 3C-SiC nucleation takes place at carbon concentration of 15%.

Language	:	Japanese
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Meeting title	:	第29回表面科学学術講演会
Held date	:	2009/10
Location (city)	:	東京
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20092559
JAEA Abstracts No. :
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