Thermal stability of deuterium ion implanted hydrogen storage material (VCrTi) using high-resolution soft X-ray synchrotron radiation photoelectron spectroscopy

Tode, Mayumi; Harries, J.; Teraoka, Yuden; Sumimoto, Yuichi; Inoue, Keisuke; Yoshigoe, Akitaka 

Thermal stability of native oxide layer on the hydrogen storage materials is related to the hydrogen absorption and desorption. Thermal instability of native oxide layer on VCrTi and deuterated VCrTi was observed by high resolution soft X-ray synchrotron radiation photoemission spectroscopy. All experiments have been conducted at the surface chemistry experimental station (SUREAC2000) at BL23SU, SPring-8. After thermal annealing, the peak that shows the oxidation weakens, and the peak that shows the metal strengthens. The thermal stability of a natural oxide layer was observed to stabilize by about 100 degrees by deuterium ion implanted.