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Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source

Sasaki, Akira; Sunahara, Atsushi*; Furukawa, Hiroyuki*; Nishihara, Katsunobu*; Fujioka, Shinsuke*; Nishikawa, Takeshi*; Koike, Fumihiro*; Ohashi, Hayato*; Tanuma, Hajime*

Atomic processes in Sn plasmas are investigated for application to extreme-ultraviolet (EUV) light sources used in microlithography. An atomic model of Sn is developed on the basis of calculated atomic data using the Hebrew University Lawrence Livermore Atomic Code (HULLAC). Resonance and satellite lines from singly and multiply excited states of Sn ions are identified. The wavelengths of the 4$$d$$-4$$f$$ + 4$$p$$-4$$d$$ transitions of Sn$$^{5+}$$ to Sn$$^{13+}$$ are investigated. Results of calculation are compared with those of the charge exchange spectroscopy, measurement of the emission spectrum of the laser produced plasma EUV source, and the opacity measurement of a radiatively heated Sn sample. A reasonable agreement is observed between calculated and experimental EUV emission spectra. The spectral emissivity and opacity of Sn plasmas are calculated using a full collisional radiative (CR) model as a function of electron temperature and ion density.



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Category:Physics, Applied



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