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Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 KeV or 1 MeV electrons

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Reshanov, S. A.*; Beljakowa, S.*; Zippelius, B.*; Pensl, G.*

Defects in n- and p-type 4H-SiC epitaxial layer were investigated by low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS). Defects were introduced by either 170 keV or 1 MeV electron irradiation into samples at RT. The samples were annealed from 25$$^{circ}$$C to 1700$$^{circ}$$C in 100$$^{circ}$$C steps. As a result of LTPL measurements, L$$_{1}$$ line was observed after irradiation. In previous studies, L$$_{1}$$ line is thought to correlate with Z$$_{1}$$/Z$$_{2}$$ centers in DLTS measurements. However, in this study, no correlation between L$$_{1}$$ and Z$$_{1}$$1/Z$$_{2}$$ was observed.

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