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Report No.

New lines and issues associated with deep defect spectra in electron, proton and $$^{4}$$He ion irradiated 4H SiC

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Kimoto, Tsunenobu*; Oshima, Takeshi; Pensl, G.*; Gali, A.*

Silicon Carbide (SiC) samples were irradiated with electron, proton and $$^{4}$$He ions and defects in the irradiated SiC were investigated by Low Temperature Photo Luminescence (LTPL). After irradiation, PL spectra between 2.48 and 2.62 eV were measured at 7 K. As a results, several PL lines were observed. These lines showed the same annealing behavior and were annealed out between 1300 and 1400$$^{circ}$$C. Therefore, it is concluded that these line have the same origin. In addition, as a result of simulation, the structure of the defect is determined to be di-carbon antisite.



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