He ion irradiated 4H SiCYan, F.*; Devaty, R. P.*; Choyke, W. J.*; Kimoto, Tsunenobu*; Oshima, Takeshi; Pensl, G.*; Gali, A.*
Silicon Carbide (SiC) samples were irradiated with electron, proton and He ions and defects in the irradiated SiC were investigated by Low Temperature Photo Luminescence (LTPL). After irradiation, PL spectra between 2.48 and 2.62 eV were measured at 7 K. As a results, several PL lines were observed. These lines showed the same annealing behavior and were annealed out between 1300 and 1400
C. Therefore, it is concluded that these line have the same origin. In addition, as a result of simulation, the structure of the defect is determined to be di-carbon antisite.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 645-648 |
Number |
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Pages |
: | p.411 - 414 |
Publication Year/Month |
: | 2010/00 |
Meeting title |
: | 13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009) |
Held date |
: | 2009/10 |
Location (city) |
: | N |
Location (country) |
: | Germany |
Paper URL |
: |
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Keywords |
: | no keyword |
Research Facility |
: |
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