-implnated Al-doped 4H-SiC epilayersBeljakowa, S.*; Reshanov, S. A.*; Zippelius, B.*; Krieger, M.*; Pensl, G.*; Danno, Katsunori*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; Devaty, R. P.*; Choyke, W. J.*
Defects in Al-doped p-type 4H-SiC were investigated using admittance spectroscopy (AS). Also, defects in 4H-SiC irradiated with electrons and He ions were studied using AS. As a result, a shallow level with activation energy at 170 meV was found and is has the capture cross section of 3.5
10
/cm
which is extremely low value. The concentration of the defect did not change even after electron and He irradiations. Also, the defect can be found after annealing at 1800 
C. Therefore, we can conclude that the defect is a very stable intrinsic defect in SiC.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 645-648 |
Number |
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Pages |
: | p.427 - 430 |
Publication Year/Month |
: | 2010/00 |
Meeting title |
: | 13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009) |
Held date |
: | 2009/10 |
Location (city) |
: | N |
Location (country) |
: | Germany |
Paper URL |
: |
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Keywords |
: | no keyword |
Research Facility |
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: |
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