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Identification of the gallium vacancy-oxygen pair defect in GaN

Son, N. T.*; Hemmingsson, C. G.*; Paskova, T.*; Evans, K. R.*; Usui, Akira*; Morishita, Norio; Oshima, Takeshi; Isoya, Junichi*; Monemar, B.*; Janz$'e$n, E.*

GaN samples were irradiated with electrons of 2 MeV at 1$$times$$10$$^{19}$$/cm$$^{2}$$, and electron spin resonance (ESR) was measured at 77 K. As a result, four defect signals which are labeled D1 to D4 were observed. The D2 signal was identified to be negatively charged gallium vacancy - oxygen pair from the details studies of $$^{14}$$N hf structure.

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Category:Materials Science, Multidisciplinary

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