Refine your search:     
Report No.

Improvement of SiC-MOS devices with plasma nitridation and AlON/SiO$$_{2}$$ stacked dielectrics

Watanabe, Heiji*; Kagei, Yusuke*; Kosono, Kohei*; Kirino, Takashi*; Watanabe, Yu*; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Yoshigoe, Akitaka ; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*

SiC-MOSFET's are expected for normally-off-type high performance power devices. Electrical defects due to residual inpurities such as carbon are in the interface of thermally-oxidized SiC-MOS's so that channel mobility is degraded preferentially. Although upgrade of reliability of a gate insulator is necessary for practical use, insulator degradation mechanisms have not well known yet. We are studying high quality MOS interface made by plasma nitridation techniques, upgrade of reliability and insulation by a stuck structure of a high-k insulator (AlON) layer and an SiO$$_{2}$$ underlayer. Recent research results on those subjects are reported in this talk.



- Accesses





[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.