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Report No.

Real-time photoelectron spectroscopy study of 3C-SiC nucleation and growth on Si(001) surface by carbonization with ethylene

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*

It is reported that Si$$_{1-x}$$C$$_{x}$$ alloy layer was formed on an Si(001) surface with C$$_{2}$$H$$_{4}$$ exposure at 933 K before nucleation. However information of the chemical bonding state and concentration of adsorbed carbon has not been clear. Therefore the carbonization reaction kinetics on an Si(001) surface reacted with C$$_{2}$$H$$_{4}$$ exposure was observed by real-time XPS to investigate the 3C-SiC nucleation kinetics. The experiments were performed at the BL23SU of SPring-8. It is suggested that the C1s spectra is composed of at least three chemically-shifted components, which are assigned to carbon-poor Si$$_{1-x}$$C$$_{x}$$ alloy, carbon-rich Si$$_{1-x}$$C$$_{x}$$ alloy and 3C-SiC. The 3C-SiC nuclei began to generate at 8000s. Using C1s and Si2p$$_{3/2}$$ peaks, carbon concentration of the Si$$_{1-x}$$C$$_{x}$$ alloy layer was estimated to be about 0.17 of x. Therefore it is suggested that critical carbon concentration is 17%.



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