Experimental determination of effective attenuation length for SiO $_{2}$ with synchrotron radiation

Teraoka, Yuden; Inoue, Keisuke

The effective attenuation length (EAL) for the photoelectron energy used is a necessary parameter for measurements of the thicknesses of overlayer films by XPS. However it has not been measured, so IMFP is substituted. All experiments were performed with the surface reaction analysis apparatus (SUREAC2000) constructed at the BL23U in the SPring-8. All measured EALs are longer than IMFP. EALs, which are calculated without suboxides, are near theoretically-calculated IMFP.

Language	:	Japanese
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Meeting title	:	第23回日本放射光学会年会・放射光科学合同シンポジウム
Held date	:	2010/01
Location (city)	:	姫路
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : BB20092987
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Experimental determination of effective attenuation length for SiO with synchrotron radiation

Experimental determination of effective attenuation length for SiO $_{2}$ with synchrotron radiation