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Carbon condensation and 3C-SiC growth caused by oxidizing Si$$_{1-x}$$C$$_{x}$$ alloy layers on Si(001) substrate

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*

Strained-Si channel complementary metal-oxide-semiconductor (CMOS) devices has been developed to improve the carrier mobility. In such CMOS devices, the channel layer is formed on an Si$$_{1-x}$$Ge$$_{x}$$ or by an Si$$_{1-x}$$C$$_{x}$$ alloy layer. In the case of Si$$_{1-x}$$Ge$$_{x}$$ alloy layer, the oxidation of alloy layer is employed for Ge concentration. On the other hand, the detail of oxidation kinetics on the IV group alloy layer has not been cleared yet. In this study, the oxidation reaction kinetics on an Si$$_{1-x}$$C$$_{x}$$ alloy layer was investigated by real-time X-ray photoelectron spectroscopy to reveal the oxidation rate and behavior of C atoms during oxidation.

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English

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Publication Year/Month

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Meeting title

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5th International Workshop on New Group IV Semiconductor Nanoelectronics

Held date

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2010/01

Location (city)

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Sendai

Location (country)

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Japan

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DOI for research data

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Keywords

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no keyword

Research Facility

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SPring-8(大型放射光施設)

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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東北大学

Accesses

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- Accesses

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